Realization of relaxed InGaN templates for red microLEDs

Lars Samuelson

doi:10.1117/12.2577547

5 March 2021 Realization of relaxed InGaN templates for red microLEDs

Lars Samuelson

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 1168616 (2021) https://doi.org/10.1117/12.2577547
Event: SPIE OPTO, 2021, Online Only

Abstract

III-Nitride based light-emitting diodes based on InGaN active layers formed on GaN, are fine for the blue and green emitting LEDs. However, the large lattice mis-match between red-emitting active layers and the GaN substrate still limits the efficiencies to very low values, typically <5%. We propose to use seeding techniques originally developed for nanowire growth, to seed the formation of ternary InGaN pyramids which later are converted to thin c-facet platelets of InGaN. I will in this presentation show that such relaxed, and dislocation-free, InGaN platelets with In-composition about 20%, have the potential as ideal templates for red-emitting microLEDs.

Conference Presentation

Citation Download Citation

Lars Samuelson "Realization of relaxed InGaN templates for red microLEDs", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 1168616 (5 March 2021); https://doi.org/10.1117/12.2577547

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