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We have fabricated and characterized AlInAsSb- and InPAsSb-absorber nBn infrared detectors with 200 K cutoff wavelengths from 2.55 to 3.25 μm. Minority-carrier lifetimes determined by microwave reflectance measurements were 0.2-1.0 μs in doped n-type absorber materials. Devices having 4 μm thick absorbers exhibited sharp cutoff at wavelengths of 2.9 μm or longer and softer cutoff at shorter wavelengths. Top-illuminated devices with n+ InAs window/contact layers had external quantum efficiencies of 40-50% without anti-reflection coating at 50 mV reverse bias and wavelengths slightly shorter than cutoff. Despite the shallow-etch mesa nBn design, perimeter currents contributed significantly to the 200 K dark current. Dark currents for InPAsSb devices were lower than AlInAsSb devices with similar cutoff wavelengths. For unoptimized InPAsSb devices with 2.55 μm cutoff, 200 K areal and perimeter dark current densities at -0.2 V bias in devices of various sizes were approximately 1x10-7 A/cm2 and 1.4x10-8 A/cm, respectively.
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J. F. Klem, J. T. Olesberg, S. D. Hawkins, P. H. Weiner, J. Deitz, C. N. Kadlec, E. A. Shaner, W. T. Coon, "Extended-short-wavelength infrared AlInAsSb and InPAsSb detectors on InAs," Proc. SPIE 11741, Infrared Technology and Applications XLVII, 117410D (12 April 2021); https://doi.org/10.1117/12.2585213