Presentation + Paper
12 April 2021 Development of small-format graphene infrared array sensors
Author Affiliations +
Abstract
There is a growing interest in low-cost small-format infrared array sensors. In this study, we demonstrate the properties of small-format graphene infrared array sensors. The devices consisted of 9 x 9 pixels, which were composed of graphene field-effect transistors (FETs) and graphene/semiconductor Schottky barrier diodes (SBDs). The photoresponses of these devices were evaluated under middle-wavelength infrared (MWIR) light irradiation. The graphene FETs exhibited ultrahigh responsivity owing to modulation of the field-effect and surface carriers caused by photocarriers generated in photosensitizers. The MWIR photoresponse of the graphene FETs was enhanced by photogating. Compared to the FETs, the SBDs showed improved dark current characteristics. The photocarriers injected into the graphene were amplified by the photogating effect induced in the graphene/insulator region. Line-scan MWIR images and profiles were obtained; the devices were mounted in ceramic image sensor packages and vacuum-cooled. They were then exposed to a scanning blackbody light source, and the MWIR photoresponse was evaluated. The photocurrent linearly increased with the step shift of the blackbody source. The results obtained in this study will contribute to the development of high-performance graphene-based IR image sensors.
Conference Presentation
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Shoichiro Fukushima, Masaaki Shimatani, Satoshi Okuda, and Shinpei Ogawa "Development of small-format graphene infrared array sensors", Proc. SPIE 11741, Infrared Technology and Applications XLVII, 117411G (12 April 2021); https://doi.org/10.1117/12.2585279
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KEYWORDS
Graphene

Infrared sensors

Infrared radiation

Mid-IR

Sensors

Field effect transistors

Image sensors

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