Paper
26 January 2021 Uniaxially tensile strained Ge/SiGe coupled quantum wells
Yi Zhang, Junqiang Sun
Author Affiliations +
Proceedings Volume 11767, 2020 International Conference on Optoelectronic Materials and Devices; 1176715 (2021) https://doi.org/10.1117/12.2592238
Event: 2020 International Conference on Optoelectronic Materials and Devices, 2020, Guangzhou, China
Abstract
We propose and analyze the Ge/SGe coupled quantum wells (CQWs) with uniaxial tensile strain. A suspended micro bridge structure is employed to introduce the uniaxial tensile strain and the value of tensile strain can be tuned through the size and shape of the suspended region. The band dispersion and absorption spectrum of the strained Ge/SiGe CQWs are calculated for both TE and TM polarizations by an 8 band kp model. By introducing 1% uniaxial tensile strain, the absorption band edge has a prominent red shift more than 100nm for both TE and TM polarizations. Under the influence of uniaxial tensile strain, the absorption of TE polarization is enhanced while the absorption of TM polarization is receded. The proposed uniaxially tensile srained Ge/SiGe CQWs scheme paves the way to efficient silicon based integrated devices.
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi Zhang and Junqiang Sun "Uniaxially tensile strained Ge/SiGe coupled quantum wells", Proc. SPIE 11767, 2020 International Conference on Optoelectronic Materials and Devices, 1176715 (26 January 2021); https://doi.org/10.1117/12.2592238
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
Back to Top