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Long-range spin transport at room temperature is one of the indispensable technologies for realizing spintronics devices. In this study, we have investigated electron spin relaxation time of (110)-oriented GaAs superlattice having tunnel-coupled quantum wells for both lateral and vertical spin transport. It was revealed that the spin relaxation time at room temperature was 0.7 ns, about 7 times longer than that of bulk GaAs which has been used for conventional spin transport layer of spin-controlled lasers. This finding provides a novel method of controlling the spin relaxation time at room temperature and indicates that the superlattice structures are promising for spin transport layers in semiconductor-based spintronics devices.
Satoshi Iba andYuzo Ohno
"Spin relaxation in (110)GaAs superlattices with tunnel-coupled quantum wells for both lateral and vertical spin transport", Proc. SPIE 11805, Spintronics XIV, 118051U (5 August 2021); https://doi.org/10.1117/12.2594929
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Satoshi Iba, Yuzo Ohno, "Spin relaxation in (110)GaAs superlattices with tunnel-coupled quantum wells for both lateral and vertical spin transport," Proc. SPIE 11805, Spintronics XIV, 118051U (5 August 2021); https://doi.org/10.1117/12.2594929