Features of dark electrical conductivity of semi-insulating p-CdTe single crystals

Valeriy M. Sklyarchuk; Volodymyr A. Gnatyuk; Toru Aoki

doi:10.1117/12.2594318

30 September 2021 Features of dark electrical conductivity of semi-insulating p-CdTe single crystals

Valeriy M. Sklyarchuk, Volodymyr A. Gnatyuk, Toru Aoki

Proceedings Volume 11838, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII; 1183818 (2021) https://doi.org/10.1117/12.2594318
Event: SPIE Optical Engineering + Applications, 2021, San Diego, California, United States

Conference Poster

Abstract

The temperature dependences of electrical characteristics of semi-insulating p-like CdTe(111) crystals, produced by Acrorad and Chernivtsi National University (ChNU), for which both ohmic and rectifying contacts were formed, have been studied. An ohmic contact was created by coating the CdTe(111)A face with an Au using chemical deposition. A rectifying contact was formed by vacuum thermal evaporation of Cr onto the CdTe(111)B face. Prior to contact deposition, both the CdTe surfaces were treated with Ar plasma at different regimes. Ohmic contacts were created both on the surfaces perpendicular and parallel to the <111< direction. Special attention was paid to weakening the effect of a metal-semiconductor intermediate layer. The dark I-V characteristics of the Au/CdTe/Au samples with two ohmic contacts revealed essential features of the electrical conductivity. The electron-hole statistic based on the electroneutrality equation (EE) and space charge limited currents (SCLC) showed that the discrepancy between the resistivity activation energy in electric fields of 0.81- 0.83 eV, where Ohm's law was fulfilled and in 0.55-0.6 eV, where SCLC was observed, was due to compensation process features but not tunneling processes through an insulating layer, which was supposedly forming when an ohmic contact was created. With increasing bias voltage, a weaker temperature dependence of the dark current was explained by difference in the compensation degree of the CdTe crystals. This parameter and deep level energy position, which was responsible for the dark conductivity, were estimated using the EE solutions and measurements of the temperature dependences of the resistance and SCLC

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Valeriy M. Sklyarchuk, Volodymyr A. Gnatyuk, and Toru Aoki "Features of dark electrical conductivity of semi-insulating p-CdTe single crystals", Proc. SPIE 11838, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII, 1183818 (30 September 2021); https://doi.org/10.1117/12.2594318

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