Presentation
1 October 2021 Panel Discussion: Mask readiness for 3nm and beyond: a mask supplier’s perspective
Author Affiliations +
Abstract
As EUV is adopted by more companies, the insertion strategy and timing begin to drive new mask requirements. Traditional lithography extensions employed for DUV may now appear with EUV, from ILT to PSM to aggressive use of pellicles. Looking beyond was has been successful with EUV HVM and towards what we anticipate the requirements will be for the future, this panel will provide a suppliers perspective on where they believe the mask infrastructure stands to support low-k1 imaging for 33NA today and the initial path to support 55NA tomorrow.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bryan S. Kasprowicz, Emily E. Gallagher, Andrew Wall, Lawrence S. Melvin III, Masashi Sunako, and Tilmann Heil "Panel Discussion: Mask readiness for 3nm and beyond: a mask supplier’s perspective", Proc. SPIE 11855, Photomask Technology 2021, 1185514 (1 October 2021); https://doi.org/10.1117/12.2618132
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