Paper
2 July 2021 Preparation of TiO2-x film with a high TCR performance for uncooled thermal sensor
Qiming Zhang, Xiaoyan Peng
Author Affiliations +
Proceedings Volume 11887, International Conference on Sensors and Instruments (ICSI 2021); 1188704 (2021) https://doi.org/10.1117/12.2603056
Event: International Conference on Sensors and Instruments 2021, 2021, Qingdao, China
Abstract
In this work, oxygen vacancy TiO2-x films were prepared by Electron Beam Evaporation (EBE) and Microwave Plasma Etching (MPE) treatment under Ar/H2 (argon/hydrogen) atmosphere for the uncooled infrared thermal sensor. The structure of the films was characterized by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscopy (FE-SEM). TiO2-x film has high resistance temperature coefficient (TCR) due to the structural transition and the oxygen vacancy produced during MPE process, which suitable for uncooled infrared thermal sensor. It can be concluded that the MPE is a fast, simple, and annealing-free treatment method to provide a constructive way to optimize the TCR of TiO2-x films.
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Qiming Zhang and Xiaoyan Peng "Preparation of TiO2-x film with a high TCR performance for uncooled thermal sensor", Proc. SPIE 11887, International Conference on Sensors and Instruments (ICSI 2021), 1188704 (2 July 2021); https://doi.org/10.1117/12.2603056
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