Plasmonic Si CMOS TeraFETs for detection, mixing, and processing sub-THz radiation

Michael Shur; Xueqing Liu; Trond Ytterdal

doi:10.1117/12.2615536

7 March 2022 Plasmonic Si CMOS TeraFETs for detection, mixing, and processing sub-THz radiation

Michael Shur, Xueqing Liu, Trond Ytterdal

Proceedings Volume 12000, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XV; 1200006 (2022) https://doi.org/10.1117/12.2615536
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Short channel Si CMOS have been used as the THz detectors and have found applications in the THz imaging arrays. Sub-terahertz excitation of phase-shifted resonant or overdamped plasma waves in short CMOS channels enables the operation of such TeraFETs as THz spectrometers. Further developments in Si CMOS sub-THz and THz applications will use Si CMOS integrated circuits. Examples of such circuits include the line-of-sight detectors (very important for future 300 GHz band 6G communications), traveling wave sub-THz amplifiers, and frequency-to-digital converters.

Conference Presentation

Citation Download Citation

Michael Shur, Xueqing Liu, and Trond Ytterdal "Plasmonic Si CMOS TeraFETs for detection, mixing, and processing sub-THz radiation", Proc. SPIE 12000, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XV, 1200006 (7 March 2022); https://doi.org/10.1117/12.2615536

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