Poster + Presentation + Paper
5 March 2022 Height distributions of uncapped InAs/InGaAsP/InP quantum dashes and their effect on emission wavelengths
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Conference Poster
Abstract
The emission wavelength of self-assembled quantum dashes can be controlled by their height. Uncapped InAs/InGaAsP/InP quantum dashes are found to have two distinct heights, which we have measured with atomic force microscopy and denoted the plateau and the peak heights. These heights range from 0.50 nm to 2.35 nm. Under the same growth conditions, for increasing uncapped quantum dash heights we observe an increase in the photoluminescence peak emission wavelength from approximately 1535 to 1543 nm for the capped layers. A growth temperature of 520°C is determined to achieve uniform height distribution for 1550 nm emission using chemical beam epitaxy.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ras-Jeevan K. Obhi, Sebastian W. Schaefer, Christopher E. Valdivia, Philip J. Poole, Jiaren Liu, Zhenguo Lu, and Karin Hinzer "Height distributions of uncapped InAs/InGaAsP/InP quantum dashes and their effect on emission wavelengths", Proc. SPIE 12010, Photonic and Phononic Properties of Engineered Nanostructures XII, 120100C (5 March 2022); https://doi.org/10.1117/12.2609954
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KEYWORDS
Indium arsenide

Atomic force microscopy

Quantum dots

Nanoparticles

Luminescence

Gallium arsenide

Statistical analysis

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