Presentation + Paper
3 March 2022 Longitudinal spatial hole burning and associated non-uniform current and carrier density profile as a power limit in high power diode lasers
S. Arslan, H. Wenzel, J. Fricke, A. Thies, A. Ginolas, C. Stölmacker, A. Maaßdorf, B. Eppich, R. B. Swertfeger, S. K. Patra, R. J. Deri, M. C. Boiselle, D. L. Pope, P. O. Leisher, G. Tränkle, P. Crump
Author Affiliations +
Proceedings Volume 12021, Novel In-Plane Semiconductor Lasers XXI; 120210F (2022) https://doi.org/10.1117/12.2609391
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
Asymmetric photon density (recombination-rate) along the high-power diode laser cavity leads to longitudinal-spatialhole- burning (LSHB), which limits maximum output power. Here, we summarize recent investigations on the impact of LSHB on current (longitudinal) and carrier (lateral and longitudinal) density distribution and hence total-recombination for continuous-wave (CW) operations. Custom diode lasers with 90 μm stripe and 3000-6000 μm resonator have been fabricated with segmented p-side contact to measure local current density and backside metallization window to measure relative carrier density (via spontaneous intensity) and infer temperature (via wavelength). Also, 98% back facet reflectivity and 0.8% and 20% front facet reflectivities have been used to vary the photon density profile and hence severity of hole-burning. We present data showing that current crowds at the front facet due to the high recombinationrate, which becomes more severe as the bias and resonator length increase. The current crowding effect is reduced using higher front facet reflectivity. Longitudinal one-dimensional simulation is broadly consistent with experiments at low bias; however, the current crowding effect is substantially stronger in the experiment than simulation at high bias. Further, spatially-resolved-spontaneous-emission measurements of intensity and wavelength demonstrate that the longitudinal carrier density is also non-uniform with a higher carrier density at the back facet for 0.8% front facet reflectivity, even at low bias, while it is flat for devices with 20%. At high bias, temperature increases at the front facet, leading to lateral carrier accumulation at the stripe edges, higher current and carrier density, which is not included in the simulation.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Arslan, H. Wenzel, J. Fricke, A. Thies, A. Ginolas, C. Stölmacker, A. Maaßdorf, B. Eppich, R. B. Swertfeger, S. K. Patra, R. J. Deri, M. C. Boiselle, D. L. Pope, P. O. Leisher, G. Tränkle, and P. Crump "Longitudinal spatial hole burning and associated non-uniform current and carrier density profile as a power limit in high power diode lasers", Proc. SPIE 12021, Novel In-Plane Semiconductor Lasers XXI, 120210F (3 March 2022); https://doi.org/10.1117/12.2609391
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Resonators

Semiconductor lasers

Continuous wave operation

High power lasers

RELATED CONTENT

86 W continuous wave diode side pumped 1341.4nm Nd YAP...
Proceedings of SPIE (September 17 2013)
Forward development of kW-class power diode laser bars
Proceedings of SPIE (May 07 2018)
High-power IR laser in SMT package
Proceedings of SPIE (February 23 2009)
Highly reliable qcw laser bars and stacks
Proceedings of SPIE (February 13 2008)
Diode pumped industrial high power cw all solid state laser...
Proceedings of SPIE (September 08 1999)

Back to Top