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HgCdTe material has been grown on GaAs substrates using Metal Organic Vapour Phase Epitaxy (MOVPE) and 64 x 64 arrays were subsequently manufactured. HgCdTe was grown on 12 wafers and 6 wafers continued through processing. Companion 320 x 256, 24 μm pitch arrays were also manufactured on the same wafer. These 320 x 256 arrays are hybridized to an existing imaging ROIC. Signal and noise data are collected as a function of bias to determine Gain vs Bias and operability of the companion detector arrays. The existing 320 x 256 ROIC was designed for astronomy applications and precludes measurements at bias values < ~ 10 V since the amplified signal from the detector saturates the well of the ROIC. Gain was measured for bias values up to ~ 10 V and extrapolated to determine gain at higher bias values. This ROIC also does not permit fast pulse measurements. An alternate ROIC has been designed for fast pulse measurements but will not be presented here. Based on the 320 x 256 array signal, noise, Gain vs Bias and morphology data all 6 processed wafers yielded 64 x 64 detector arrays that are available for hybridization to ROICs. 320 x 256 arrays had operability < 99.9% based on the signal and noise data. Response and noise histograms have mean and median values within 1% of each other. The noise histogram is near Gaussian in shape. APD arrays hybridized to fanout chips are in assembly and APD gain vs bias, noise and transient response measurements are being measured directly without going through a ROIC.
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A. I. D'Souza, V. Khalap, I. Baker, E. Zemaityte, I. Prighozin, E. Bellotti, "Infrared APD detectors for high bandwidth applications," Proc. SPIE 12091, Image Sensing Technologies: Materials, Devices, Systems, and Applications IX, 1209104 (30 May 2022); https://doi.org/10.1117/12.2619237