Long-term irradiation effects in p-MNOS transistor: experiment results

E. Mrozovskaya; P. Chubunov; G. Zebrev

doi:10.1117/12.2624612

30 January 2022 Long-term irradiation effects in p-MNOS transistor: experiment results

E. Mrozovskaya, P. Chubunov, G. Zebrev

Proceedings Volume 12157, International Conference on Micro- and Nano-Electronics 2021; 1215710 (2022) https://doi.org/10.1117/12.2624612
Event: International Conference on Micro- and Nano-Electronics 2021, 2021, Zvenigorod, Russian Federation

Abstract

The dosimeters based on RADFETs are high actual for utilizing in space where the low dose rates irradiation prevails. The paper presents new experimental data on low-intensity irradiation of p-MNOS based RADFET. The obtained results were compared with the results of irradiation at high dose rates. The effect of ELDRS and the simultaneous annealing effect on different types of samples were discussed. The sensitivity of both types changed similarly at the range 1-100 rad(Si)/s. However, for dose rates less than 1 rad(Si)/s, the effect of the simultaneous annealing on change in the threshold voltage shift in time was clearly noticed only for samples with 500 nm oxide and absented for samples with 150 nm oxide.

Citation Download Citation

E. Mrozovskaya, P. Chubunov, and G. Zebrev "Long-term irradiation effects in p-MNOS transistor: experiment results", Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 1215710 (30 January 2022); https://doi.org/10.1117/12.2624612

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