Presentation + Paper
1 December 2022 Low-n mask progressing insights: focus on isolated features
Author Affiliations +
Abstract
Low-n masks have gained strong interest due to their potential to simultaneously improve dose and imaging contrast for dense clips. We’ve presented before that for the imaging of isolated features mask bias and assist features are crucial to minimize the focus range through pitch. In this paper we elaborate on aberration sensitivity for different mask absorber types. We observe that even aberration sensitivities can change significantly by changing the mask absorber type for the same use case. We show that even aberration sensitivity and best-focus shifts are coupled and that they can also be solved together by applying mask & target bias and/or assist features. Finally we show how assist-feature position optimization can reduce the impact of odd aberrations on two-bar features.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Claire van Lare, Jo Finders, and Tasja van Rhee "Low-n mask progressing insights: focus on isolated features", Proc. SPIE 12292, International Conference on Extreme Ultraviolet Lithography 2022, 122920K (1 December 2022); https://doi.org/10.1117/12.2644332
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KEYWORDS
Photomasks

SRAF

Diffraction

3D image processing

Semiconducting wafers

Extreme ultraviolet

Extreme ultraviolet lithography

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