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Low-n masks have gained strong interest due to their potential to simultaneously improve dose and imaging contrast for dense clips. We’ve presented before that for the imaging of isolated features mask bias and assist features are crucial to minimize the focus range through pitch. In this paper we elaborate on aberration sensitivity for different mask absorber types. We observe that even aberration sensitivities can change significantly by changing the mask absorber type for the same use case. We show that even aberration sensitivity and best-focus shifts are coupled and that they can also be solved together by applying mask & target bias and/or assist features. Finally we show how assist-feature position optimization can reduce the impact of odd aberrations on two-bar features.
M. Claire van Lare,Jo Finders, andTasja van Rhee
"Low-n mask progressing insights: focus on isolated features", Proc. SPIE 12292, International Conference on Extreme Ultraviolet Lithography 2022, 122920K (1 December 2022); https://doi.org/10.1117/12.2644332
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M. Claire van Lare, Jo Finders, Tasja van Rhee, "Low-n mask progressing insights: focus on isolated features," Proc. SPIE 12292, International Conference on Extreme Ultraviolet Lithography 2022, 122920K (1 December 2022); https://doi.org/10.1117/12.2644332