Poster + Paper
27 December 2022 Thermal characterization of high-power GaSb-based laser
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Conference Poster
Abstract
High power mid-infrared GaSb-based lasers are desired for many applications, however, the self-heating in the active region is still one of the main influence factors for practical application. In this paper, we report on fabrication and characterization of high-power GaSb-based lasers. The temperature dependence of output performance of the device was investigated. Due to the high quality of epitaxy and wide waveguide design, the lasers exhibited a high-power capability from 288 K to 318 K. Devices with a cavity length of 1.5 mm and an aperture of 100 μm delivered a power of 1.46 W at a current of 7 A at 288 K and remains 1.10 W at 318 K under CW operation limited by thermal rollover. The characteristic temperature T0 is 151 K and 68 K below and above 298 K, respectively.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jianmei Shi, Cheng'ao Yang, Yihang Chen, Tianfang Wang, Hongguang Yu, Yu Zhang, Yingqiang Xu, and Zhichuan Niu "Thermal characterization of high-power GaSb-based laser", Proc. SPIE 12311, Semiconductor Lasers and Applications XII, 123110R (27 December 2022); https://doi.org/10.1117/12.2642099
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KEYWORDS
High power lasers

Heatsinks

Semiconductor lasers

Continuous wave operation

Mid-IR

Waveguides

Epitaxy

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