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Mesa-based depleted passivation InGaAs photodetectors have a lower dark current than classical mesa type photodetectors due to in-device passivation. However, the in-device passivation layer’s depleted state induces electrical crosstalk. High electric field distribution between the pixels originating from the depleted state is the main reason for increased electrical crosstalk. An additional thin crosstalk-block layer in the modified depleted passivation InGaAs photodetectors manipulates this electric field distribution between the pixels and improves inter-pixel crosstalk while dark current suppression is preserved.
Kubra Circir andSerdar Kocaman
"Inter-pixel crosstalk improvement based on a thin crosstalk-block layer for mesa-based InGaAs photodetectors", Proc. SPIE 12430, Quantum Sensing and Nano Electronics and Photonics XIX, 124300T (15 March 2023); https://doi.org/10.1117/12.2651070
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Kubra Circir, Serdar Kocaman, "Inter-pixel crosstalk improvement based on a thin crosstalk-block layer for mesa-based InGaAs photodetectors," Proc. SPIE 12430, Quantum Sensing and Nano Electronics and Photonics XIX, 124300T (15 March 2023); https://doi.org/10.1117/12.2651070