EUV pellicle scanner integration for N2 nodes and beyond

Mark van de Kerkhof; Alexander Klein; Beatriz Seoane; Paul Vermeulen; Emily Gallagher; Marina Y. Timmermans; Ivan Pollentier; Joost Bekaert

doi:10.1117/12.2658353

28 April 2023 EUV pellicle scanner integration for N2 nodes and beyond

Mark van de Kerkhof, Alexander Klein, Beatriz Seoane, Paul Vermeulen, Emily Gallagher, Marina Y. Timmermans, Ivan Pollentier, Joost Bekaert

Author Affiliations +

Proceedings Volume 12494, Optical and EUV Nanolithography XXXVI; 124940D (2023) https://doi.org/10.1117/12.2658353
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

EUV lithography has been adopted worldwide for High-Volume Manufacturing (HVM) of sub-10nm node semiconductors. To support HVM, EUV pellicles were introduced by ASML in 2016. More recently, several novel pellicle materials have been developed to offer higher transmission and support higher source powers. The current focus is on two classes of pellicles to support the upcoming NXE:3800 and the associated N2 node, and beyond: Si-based composites and CNT-based pellicles. In this paper, we will give an overview of scanner integration results of current EUV pellicles, both Si-based composites and CNT-based pellicles. This overview will cover high-level aspects of transmission, imaging, robustness and lifetime; as well as underlying contributors such as EUV-uniformity, EUV-reflectivity, flare and DUV-reflectivity. Reviewing achieved performance will illustrate the suitability of these materials to support advanced nodes in production. Additionally, the anticipated future performance of EUV pellicles when used with increasing EUV source powers and high-NA scanners will be provided.

Conference Presentation

Citation Download Citation

Mark van de Kerkhof, Alexander Klein, Beatriz Seoane, Paul Vermeulen, Emily Gallagher, Marina Y. Timmermans, Ivan Pollentier, and Joost Bekaert "EUV pellicle scanner integration for N2 nodes and beyond", Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 124940D (28 April 2023); https://doi.org/10.1117/12.2658353

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