Aqueous base developable novel deep-UV resist for KrF excimer laser lithography

Makoto Murata; Toshihiko Takahashi; Mitsunobu Koshiba; Shin-ichi Kawamura; Tsuguo Yamaoka

doi:10.1117/12.20083

1 June 1990 Aqueous base developable novel deep-UV resist for KrF excimer laser lithography

Makoto Murata, Toshihiko Takahashi, Mitsunobu Koshiba, Shin-ichi Kawamura, Tsuguo Yamaoka

Proceedings Volume 1262, Advances in Resist Technology and Processing VII; (1990) https://doi.org/10.1117/12.20083
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

A novel deep-UV resist which consists of poly(p-trimethylsilyloxystyrene) and pnitrobenzyl- 9,10-diethoxyanthracene-2-sulfonate showed capability of resolving 0.3 im lines and spaces with steep sidewalls at 0.8 im thickness by use of a KrF excimer laser stepper. Wet development in a conventional tetramethylammonium hydroxide developer caused no critical thickness loss in the unexposed area. Owing to its oxygen plasma durability, this resist was shown to work as a top layer of a bi-layer resist.

Citation Download Citation

Makoto Murata, Toshihiko Takahashi, Mitsunobu Koshiba, Shin-ichi Kawamura, and Tsuguo Yamaoka "Aqueous base developable novel deep-UV resist for KrF excimer laser lithography", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20083

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