Paper
1 June 1990 Dry etching for high-resolution maskmaking
Serge V. Tedesco, Christophe Pierrat, Jean Michel Lamure, C. Sourd, Jean-Luc Martin, Jean Charles Guibert
Author Affiliations +
Abstract
New development on both positive and negative tone resist allows maskmaking technology to achieve sub half micron fea tures through dry etching process. This paper will demonstrate lOOnm to 200nm lines and spaces maskmaking capability using standard chromium photomask coa ted with single layer resist SAL6O1 from Shipley for negative tone image and PLASI4ASK from UCB Electronics using the PRIME process for positive tone image. Moreover using PRIME a full dry process from resist deve lopment to chromium etching is proposed. An optimized process point for chromium etching using both SAL6O1 and PLASMASK resists obtained by statiscal experimen tal design is proposed. I .
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Serge V. Tedesco, Christophe Pierrat, Jean Michel Lamure, C. Sourd, Jean-Luc Martin, and Jean Charles Guibert "Dry etching for high-resolution maskmaking", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); https://doi.org/10.1117/12.20185
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CITATIONS
Cited by 3 scholarly publications and 1 patent.
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KEYWORDS
Chromium

Etching

Dry etching

Photoresist processing

Glasses

Semiconducting wafers

Optical lithography

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