Scaling of transconductance in ultra-submicron GaAs MESFETs and HEMTs

Joseph M. Ryan; Jaeheon Han; Alfred M. Kriman; David K. Ferry; Peter G. Newman

doi:10.1117/12.20771

1 October 1990 Scaling of transconductance in ultra-submicron GaAs MESFETs and HEMTs

Joseph M. Ryan, Jaeheon Han, Alfred M. Kriman, David K. Ferry, Peter G. Newman

Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20771
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Ultra-submicron GaAs MESFETs have been fabricated with gate lengths ranging from 25 nm to 80 nm, using an electron-beam lithography process. The MESFETs were fabricated on vapor-phase grown wafers. The HEMT devices were fabricated on MBE grown wafers. Measurements of the transconductances of these devices, as a function of the effective gate length, exhibit transconductance degradation due to a diminishing aspect ratio. Velocity overshoot, saturation due to substrate current (MESFETs), real space transfer (HEMTs) and/or source dependent minimum acceleration lengths(both). In addition, the HEMTs with gate lengths less than 3Onm exhibit exponentially dependent current. This suggests that tunneling is the dominant current mechanism and the final limit to scaling of conventional FETs has been observed.

Citation Download Citation

Joseph M. Ryan, Jaeheon Han, Alfred M. Kriman, David K. Ferry, and Peter G. Newman "Scaling of transconductance in ultra-submicron GaAs MESFETs and HEMTs", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20771

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