Heterogenous integration of gallium oxide with diamond and SiC

Arpit Nandi; Indraneel Sanyal; Alexander Petkov; James W. Pomeroy; David Cherns; Martin Kuball

doi:10.1117/12.3013691

15 March 2024 Heterogenous integration of gallium oxide with diamond and SiC

Arpit Nandi, Indraneel Sanyal, Alexander Petkov, James W. Pomeroy, David Cherns, Martin Kuball

Proceedings Volume 12887, Oxide-based Materials and Devices XV; 128870C (2024) https://doi.org/10.1117/12.3013691
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Gallium Oxide (Ga₂O₃) has attracted great attention due to its predicted high critical electric field, and consequentially its expectation to have impact for high voltage power devices. However, from a device design and reliability perspective, it has certain drawbacks: Ga₂O₃ has a relatively low thermal conductivity, potentially causing excessively high device temperatures, accelerating device degradation; usable p-doping is unavailable, preventing the use of advanced devices designs such as superjunctions which require both n- and p-doping. It is critically important to address these limitations for Ga₂O₃ to compete with SiC which is Ga₂O₃’s direct competitor, where advanced device concepts such as superjunctions are in process being explored, and prototype devices have already been realized. For Ga₂O₃, one possible solution is heterogeneous integration with other wide or ultra-wide bandgap materials which can be p-doped. Selecting materials with higher thermal conductivity would also address thermal management. Nickel Oxide has been explored as a p-type material and successful Gallium Oxide / Nickel Oxide high voltage proto-type devices have been demonstrated. However, Nickel Oxide’s has a low thermal conductivity, so enabling devices which can handle high current densities may be a challenge. Based on these criteria, diamond and SiC are primary candidates for integration with Ga₂O₃. We report here on integration by metal organic chemical vapor deposition (MOCVD) of Ga₂O₃ with diamond and SiC. We also explore direct bonding as an alternative heterogenous integration method.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Arpit Nandi, Indraneel Sanyal, Alexander Petkov, James W. Pomeroy, David Cherns, and Martin Kuball "Heterogenous integration of gallium oxide with diamond and SiC", Proc. SPIE 12887, Oxide-based Materials and Devices XV, 128870C (15 March 2024); https://doi.org/10.1117/12.3013691

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