Presentation + Paper
13 March 2024 CW room temperature operation of the GaSb-based photonic crystal surface emitting diode lasers
Author Affiliations +
Abstract
We report on the continuous wave (CW) room temperature operation of epitaxially regrown monolithic GaSb-based photonic crystal surface emitting diode lasers (PCSEL) with λ ≈ 2 μm. The devices are based on laser heterostructure containing carrier stopper layer designed to inhibit electron leakage into buried photonic-crystal section. Atomic hydrogen cleaning of the nanopatterned surface followed by optimized epitaxial step resulted in highly uniform airpocket-retaining regrowth. The increase of the number of air-pockets in unit cells of the buried photonic crystal layer led to enhancement of the PCSEL output power and improvement of the far field pattern The PCSELs with buried high-index-contrast photonic crystal utilizing four air-pockets per unit cell generated 30 mW of continuous wave power from 200 μm diameter aperture.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
L. Shterengas, W. Lee, R. Liu, A. Stein, G. Kipshidze, and G. Belenky "CW room temperature operation of the GaSb-based photonic crystal surface emitting diode lasers", Proc. SPIE 12905, Novel In-Plane Semiconductor Lasers XXIII, 1290506 (13 March 2024); https://doi.org/10.1117/12.3001052
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KEYWORDS
Photonic crystals

Design

Continuous wave operation

Heterojunctions

Semiconductor lasers

Diodes

Gallium antimonide

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