Presentation + Paper
10 April 2024 High-power EUV light sources (>500w) for high throughput in next-generation EUV lithography tools
Author Affiliations +
Abstract
EUV lithography systems are now fully deployed in the high-volume manufacturing of leading edge semiconductor devices. In this paper, we review the performance of ASML’s current generation light sources in the field and preview the next step in EUV source performance for the NXE:3800E system. The NXE:3800E system marks a substantial step forward in scanner productivity, delivering a remarkable increase of (+60 WPH) in throughput, made possible by an increase in EUV source power (to >500W). This significant increase in power was achieved through improvements in the droplet generator, higher power CO2 drive laser, improved collector design, and enhancements in our plasma controls required for higher plasma power. Details of these developments and their impact on system design and performance will be discussed, along with recent high-power performance demonstrations of the overall integrated EUV light source system.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Klaus Hummler, Qiushi Zhu, Keegan Behm, Liane Matthes, Zhaohan He, Omar Biabani, Andrew LaForge, Bob Rollinger, Dustin Urone, Niek Kleemans, Martin Jurna, Sean McGrogan, Peter Mayer, Michael Purvis, Sander Derks, Alberto Villalta, Abhiram Govindaraju, Yue Ma, and Daniel Brown "High-power EUV light sources (>500w) for high throughput in next-generation EUV lithography tools", Proc. SPIE 12953, Optical and EUV Nanolithography XXXVII, 129530V (10 April 2024); https://doi.org/10.1117/12.3010463
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KEYWORDS
Extreme ultraviolet

Extreme ultraviolet lithography

Plasma

Carbon monoxide

Light sources

Gas lasers

Scanners

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