Balancing mask manufacturability and image quality with inverse lithography: a study on variable fracture sizes

Fu Li; Yu Mu; Jingjing Fan; Chunlong Yu; Ruihua Liu; Song Sun; Chong Wang; Jiangliu Shi; Qingchen Cao

doi:10.1117/12.3010071

10 April 2024 Balancing mask manufacturability and image quality with inverse lithography: a study on variable fracture sizes

Fu Li, Yu Mu, Jingjing Fan, Chunlong Yu, Ruihua Liu, Song Sun, Chong Wang, Jiangliu Shi, Qingchen Cao

Author Affiliations +

Proceedings Volume 12953, Optical and EUV Nanolithography XXXVII; 1295310 (2024) https://doi.org/10.1117/12.3010071
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

Inverse lithography technology (ILT) has been the focus of research for several years due to its ability to produce theoretically optimal mask shapes. However, its widespread adoption has been hindered by the complex computational techniques involved and the challenges associated with writing curvilinear ILT mask shapes. To enhance manufacturability, one approach involves streamlining the curvilinear mask shapes by converting them into simplified, ‘Manhattanized’ rectangular shapes using a mask rule constraint (MRC) compliant ILT method. The aim of this study is to examine the influence of mask fracture sizes on manufacturability and to assess the impact of traditional optical proximity correction (OPC), curvilinear ILT, and Manhattanized ILT on the quality of photographic images. The study focuses on challenging cell structures, and generating pattern shapes using traditional OPC, curvilinear ILT, and Manhattanized ILT with MRC compliance. Fracture sizes were varied from 5nm to 25nm in increments of 5nm. To compare mask manufacturability across different patterns, several factors were evaluated, including data fracturing, writing time, and metrology. Photographic image quality metrics, such as NILS (Normalized Image Log-Slope), MEEF (Mask Error Enhancement Factor), EPE (Edge Placement Error), PV-band (Process Variation Band), and CDOF (Common Depth of Focus) were also assessed. The comprehensive analysis aims to provide a better understanding of the trade-offs between different approaches and guide future improvements in mask manufacturability and image quality.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

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Fu Li, Yu Mu, Jingjing Fan, Chunlong Yu, Ruihua Liu, Song Sun, Chong Wang, Jiangliu Shi, and Qingchen Cao "Balancing mask manufacturability and image quality with inverse lithography: a study on variable fracture sizes", Proc. SPIE 12953, Optical and EUV Nanolithography XXXVII, 1295310 (10 April 2024); https://doi.org/10.1117/12.3010071

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