Wafer printability simulation of EUV mask defects using mask SEM and AFM

Donghwan Son; Lanpo He; Masaki Satake; Ying He; Kihun Park; Suhwan Kim; Jing Jiao; Peter Hu; Vikram Tolani; Kangjoon Seo; Kiwoo Jun; Heeyeon Jang; Sujeong Won; Bonseung Koo; Yongwook Lee; Sungha Woo; Euisang Park

doi:10.1117/12.3010196

9 April 2024 Wafer printability simulation of EUV mask defects using mask SEM and AFM

Donghwan Son, Lanpo He, Masaki Satake, Ying He, Kihun Park, Suhwan Kim, Jing Jiao, Peter Hu, Vikram Tolani, Kangjoon Seo, Kiwoo Jun, Heeyeon Jang, Sujeong Won, Bonseung Koo, Yongwook Lee, Sungha Woo, Euisang Park

Author Affiliations +

Proceedings Volume 12955, Metrology, Inspection, and Process Control XXXVIII; 129552N (2024) https://doi.org/10.1117/12.3010196
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

The impact of mask defects on wafers has been successfully simulated by KLA’s mask SEM-to-Aerial (S2A) image simulator. The high prediction accuracy, high throughput and low cost have been proven by mask shop production users. S2A generates the reference mask SEM images by rendering the post-OPC design to match with measured mask SEM images containing defects. From the two mask SEM images, defect-free reference absorber contour and defective absorber contour are extracted, and the two contours are used for wafer-level aerial image simulation through EUV scanner conditions. Pass/Fail of %CDE, EPE, etc. are reported by automatically generating measurement cutlines. S2A can be used for wafer prediction for pre/post-repair full height absorber defects using top-down mask SEM images, but it cannot be used for EUV multi-layer buried defects or for partial height residues remaining after repair. KLA and SK hynix have been investigating a solution for this use case using AFM images, which can measure the height error from the buried defect or partial height residue in post-repair mask. In this paper, we will show how measured SEM and AFM images are processed to fit with rendered reference SEM and AFM images. We then show how advanced scanner simulation models are used for determining the wafer printability of mask absorber defects, buried defects and absorber residues. Finally, the predicted wafer impact of the mask defect is compared with wafer SEM images for validation. This approach, named S2A-3D, will help reduce loading on EUV actinic metrology and provide a fast, accurate and cost-effective dispositioning of post-repair EUV defects.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Donghwan Son, Lanpo He, Masaki Satake, Ying He, Kihun Park, Suhwan Kim, Jing Jiao, Peter Hu, Vikram Tolani, Kangjoon Seo, Kiwoo Jun, Heeyeon Jang, Sujeong Won, Bonseung Koo, Yongwook Lee, Sungha Woo, and Euisang Park "Wafer printability simulation of EUV mask defects using mask SEM and AFM", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129552N (9 April 2024); https://doi.org/10.1117/12.3010196

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