Resist develop optimize to improve CDU and reduce process defect

Yuan Hsu; Fumitaka Kameyama

doi:10.1117/12.3009778

9 April 2024 Resist develop optimize to improve CDU and reduce process defect

Yuan Hsu, Fumitaka Kameyama

Proceedings Volume 12957, Advances in Patterning Materials and Processes XLI; 129571L (2024) https://doi.org/10.1117/12.3009778
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

The pattern size of semiconductor circuits has been shrunk as technical advances continued. It is critical to the photomask which contained a considerably shrunk circuit and ultra-high density pattern for sub–20nm tech devices. Develop process has a great impact on the quality of the photomask manufacturing such as CD uniformity and defect control. In this paper, we discussion two develop optimization cases to improve CDU and to reduce process defects.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Yuan Hsu and Fumitaka Kameyama "Resist develop optimize to improve CDU and reduce process defect", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 129571L (9 April 2024); https://doi.org/10.1117/12.3009778

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available