It has been shown that the optoelectronic properties of WSe2, such as strong light absorption, high carrier mobility, and direct bandgap, make it a desirable material for a range of devices, including photodetectors, photovoltaics, and light-emitting diodes. At the same time, the physical characteristics of materials, including their electrical and optical properties, are greatly influenced by defects. The structural defects in WSe2 have a distinctive effect on their light-matter interactions, and the ensuing performance of the devices. The prospect of utilizing these effects in cutting-edge technologies, such as quantum information and quantum optoelectronics, comes when the nature of such defects in WSe2 is better understood and regulated through various defect generation schemes. Here, we discuss how surface modifications in mechanically-exfoliated WSe2 crystallites through a plasma process effects the light emission properties of the crystallites, where such studies are conducted through Raman and photoluminescence spectroscopy.
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