New meander channel 2-D CCD imager on GaAs

Peter B. Kosel; Nercy Bozorgebrahimi

doi:10.1117/12.21736

1 September 1990 New meander channel 2-D CCD imager on GaAs

Peter B. Kosel, Nercy Bozorgebrahimi

Proceedings Volume 1308, Infrared Detectors and Focal Plane Arrays; (1990) https://doi.org/10.1117/12.21736
Event: 1990 Technical Symposium on Optics, Electro-Optics, and Sensors, 1990, Orlando, FL, United States

Abstract

The design, fabrication, and operation of a two-phase meander-channel CCD imager on GaAs are described. The fabrication process is based on the use of anodic oxidation for producing thin dielectric isolations between close-packed Schottky-barrier metal electrodes and the employment of recessed gates for producing self-aligned potential barriers between the adjacent charge wells of the meander channel. Additionally, the semiinsulating property of GaAs is utilized in order to produce the high-speed photoconductive sensors. It is shown that such imagers can have unit cell sizes and pixel densities comparable to their silicon counterparts but offer the speed of performance higher by about one order of magnitude.

Citation Download Citation

Peter B. Kosel and Nercy Bozorgebrahimi "New meander channel 2-D CCD imager on GaAs", Proc. SPIE 1308, Infrared Detectors and Focal Plane Arrays, (1 September 1990); https://doi.org/10.1117/12.21736

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