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2 October 2024 Electrical switch of phase change materials: toward the control of crystallinity for multi-level reconfigurable nanophotonics
Capucine Laprais, Nicolas Baboux, Lotfi Berguiga, Guilaume Saint Girons, Sébastien Cueff
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Proceedings Volume 13110, Active Photonic Platforms (APP) 2024; 131100D (2024) https://doi.org/10.1117/12.3027437
Event: Nanoscience + Engineering, 2024, San Diego, California, United States
Abstract
Phase change materials (PCM) have gained a considerable interest in the photonics community as active materials in reconfigurable devices. Their significant change of optical properties upon the amorphous to crystalline reversible phase transition enables a large and dynamical tuning of devices’ response. Among the various PCM, Ge2Sb2Te5 (GST) is the most widely used thanks to its fast phase change as well as the large modulation of its refractive index (Δn > 1). Although this PCM has been mainly exploited for simple binary on-off functions, it presents an additional degree of freedom: the multi-level partial change of state. Indeed, we show in this paper multi-level continuously tunable reflectivity allowed by the electrically-controlled partial crystallization of GST. This is achieved via the Joule effect, by injecting short voltage pulses (few tens of μs) through platinum microheaters underneath GST patches. This electrically-induced phase transition is the most promising strategy for PCM integration in industrial foundries and shows promises for individual pixel addressing in multi-level applications such as neuromorphic computing or grayscale displays.
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Capucine Laprais, Nicolas Baboux, Lotfi Berguiga, Guilaume Saint Girons, and Sébastien Cueff "Electrical switch of phase change materials: toward the control of crystallinity for multi-level reconfigurable nanophotonics", Proc. SPIE 13110, Active Photonic Platforms (APP) 2024, 131100D (2 October 2024); https://doi.org/10.1117/12.3027437
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KEYWORDS
Crystallization
Reflectivity
Platinum
Optical properties
Nanophotonics
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