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We review our recent studies on a newly discovered three-dimensional (3D) rectification effect in grating-gate InGaAs-channel High-Electron-Mobility Transistor (HEMT) THz plasmonic detectors. We demonstrate that the detector internal responsivity can be exponentially enhanced under a forward (positive) bias voltage application in the gate-readout configuration. Also, we demonstrate that the dc potential rise in the channel due to a strong dc current flow causes the degradation of the internal responsivity and can be suppressed by an appropriate grounding structure for the channel. A record internal responsivity of 1.2 A/W at 0.8 THz for grating-gate plasmonic detectors was achieved.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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A. Satou, T. Otsuji, "3D rectification effect in grating-gate InGaAs-channel HEMT THz plasmonic detectors," Proc. SPIE 13141, Terahertz Emitters, Receivers, and Applications XV, 1314106 (1 October 2024); https://doi.org/10.1117/12.3029292