Poster + Paper
20 November 2024 Measurement of 13.5nm 2%BW in-band EUV power based on HCT-DPP source
Author Affiliations +
Conference Poster
Abstract
The technical route of EUV light sources is divided into two routes. One is high power sources for high volume production, and the other is low for in-house metrology and performance studies on EUV-mask-blanks, EUV masks, and photoresists. This research focuses on the second technical route and concentrates on photoresist inspection. The current mainstream industrial applications include AIXUV’s EUV-LAMP, EUV-Tube from Phoenix EUV and Energetiq’s Electrodeless EQ-10 source. Our research is similar to AIXUV’s EUV-LAMP, which uses the Hollow Cathode cathode-triggered DPP-EUV source. Since the research is in its infancy, the achievement of various indicators of the light source is unidentified. To characterize the source’s in-band power (13.5nm 2% bandwidth), a power measurement based on a zirconium membrane filter, a Mo/Si multilayer mirror, and an EUV photodetector is proposed. At Xenon flow rate of 2.5 sccm, with pressure in the discharge chamber of few pascals, charge voltage of 3 kV, and a repetition frequency of 100 Hz, the 2%BW in-band power measured is above 5 W/4π sr.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Jiale Zheng, Chenhao Zhou, Haoxuan Xiao, Kunwei Guo, Xiao Ling, Tenfeng Yan, and JianHua Zhang "Measurement of 13.5nm 2%BW in-band EUV power based on HCT-DPP source", Proc. SPIE 13241, Optical Metrology and Inspection for Industrial Applications XI, 132411A (20 November 2024); https://doi.org/10.1117/12.3037536
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KEYWORDS
Extreme ultraviolet

Electrons

Anodes

Xenon

Light sources

Ionization

Photodiodes

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