Paper
13 December 2024 Design and simulation of a waveguide-integrated GeSi modulator based on the Franz-Keldysh effect with a high-efficiency butt-coupling structure
Author Affiliations +
Proceedings Volume 13499, AOPC 2024: Optical Devices and Integration; 1349906 (2024) https://doi.org/10.1117/12.3045500
Event: Applied Optics and Photonics China 2024 (AOPC2024), 2024, Beijing, China
Abstract
We present a waveguide-integrated electro-absorption modulator utilizing GeSi alloy technology with a butt-coupling configuration. By introducing a poly-Si taper, the coupling efficiency of the modulator is maintained above 95% within the 1500-1600 nm wavelength range. The demonstrated device achieves a 3dB bandwidth of up to 197 GHz at the wavelength of 1550 nm, an extinction ratio of 5.32 dB, and an insertion loss of 2.68 dB. Additionally, the modulator exhibits excellent detection performance with a responsivity of 0.986 A/W.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Guoqi Zhou, Bin Li, Bo Tang, Wangwang Yin, Peng Zhang, Ruonan Liu, Yan Yang, Kai Huang, Gang Yang, Zaili Yang, and Zhihua Li "Design and simulation of a waveguide-integrated GeSi modulator based on the Franz-Keldysh effect with a high-efficiency butt-coupling structure", Proc. SPIE 13499, AOPC 2024: Optical Devices and Integration, 1349906 (13 December 2024); https://doi.org/10.1117/12.3045500
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KEYWORDS
Silicon

Modulators

Waveguides

Absorption

Electric fields

Modulation

Germanium

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