Paper
13 December 2024 High-power InP-based uni-travelling-carrier photodetectors
Da-bao Yang, Dong Xing, Bo Liu, Xiang-yang Zhao, Zhihong Feng
Author Affiliations +
Proceedings Volume 13499, AOPC 2024: Optical Devices and Integration; 1349907 (2024) https://doi.org/10.1117/12.3045583
Event: Applied Optics and Photonics China 2024 (AOPC2024), 2024, Beijing, China
Abstract
A novel high-power charge-compensated modified uni-traveling carrier (CC-MUTC) PD on a semi-insulating InP substrate was designed and fabricated. To extend its 3-dB bandwidth, its absorption layer adopted a p-type Gaussian doping structure, and thickness of the InP substrate is reduced to 12µm. The back-illuminated device was flip-chipped mounted on a 100µm-thick diamond-based coplanar waveguide circuit to facilitate heat dissipation. Typical responsivity of the fabricated PDs is 0.7A/W at 1.55μm wavelength for a bias voltage of -6V. The output power of 20.4dBm was measured at 8GHz, 21.7dBm at 10GHz and 19.4dBm at 12GHz. The newly designed UTC-PD has sufficiently good potential for application in need of the high output power and also for next-generation digital and analog optical fiber transmission systems.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Da-bao Yang, Dong Xing, Bo Liu, Xiang-yang Zhao, and Zhihong Feng "High-power InP-based uni-travelling-carrier photodetectors", Proc. SPIE 13499, AOPC 2024: Optical Devices and Integration, 1349907 (13 December 2024); https://doi.org/10.1117/12.3045583
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KEYWORDS
Absorption

Palladium

Diffusion

Doping

Electric fields

Interfaces

Photodetectors

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