Cyclotron resonance and photoluminescence in GaAs in a microwave field

B. M. Ashkinadze; Vassilij V. Bel'kov; A. G. Krasinskaya

doi:10.1117/12.24306

1 March 1991 Cyclotron resonance and photoluminescence in GaAs in a microwave field

B. M. Ashkinadze, Vassilij V. Bel'kov, A. G. Krasinskaya

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24306
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Microwave absorption in GaAs and influence of hot charge carriers on formation and dissociation prcxeses of xund states was studied. I'1k investigated classical cyclotron resonance in pure GaAs epitaxial layers. This made it ible with tt lp of contact I method to determins a norecjilibrium electron mobility . Smooth decreasir of exciton 1umirscence with inoreasir of microwave power was observed and a model describir this ptnomenon was suggested.

Citation Download Citation

B. M. Ashkinadze, Vassilij V. Bel'kov, and A. G. Krasinskaya "Cyclotron resonance and photoluminescence in GaAs in a microwave field", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24306

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