Paper
1 March 1991 Determination of electrostatic potentials and charge distributions in bulk and at interfaces by electron microscopy techniques
B. Hugsted, K. Gjonnes, J. Tafto, Jon Gjonnes, H. Matsuhata
Author Affiliations +
Abstract
High energy electron diffraction is sensitive to details in charge and potential distribution since scattering occurs by the net charge or electrostatic potential. Several techniques have been developped for characterization the atomic and electronic structure at or near interfaces: convergent beam profiles critical voltage effect in electron diffraction reflection/refraction at interfaces. Appplications are shown to bulk semiconductors single interfaces and multilayers.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Hugsted, K. Gjonnes, J. Tafto, Jon Gjonnes, and H. Matsuhata "Determination of electrostatic potentials and charge distributions in bulk and at interfaces by electron microscopy techniques", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24438
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Interfaces

Diffraction

Scattering

Optoelectronic devices

Refraction

Electron microscopy

Reflection

RELATED CONTENT


Back to Top