Paper
1 March 1991 Growth by liquid phase epitaxy and characterization of GaInAsSb and InAsSbP alloys for mid-infrared applications (2-3 um)
Eric Tournie, J. L. Lazzari, Habib Mani, F. Pitard, Claude L. Alibert, Andre Francis Joullie
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Abstract
We present the liquid phase epitaxy growth (LPE) of GaInAsSb/( 1 00) GaSb and InAsSbP/( 1 00) InAs near their miscibility gap (MG) boundaries. The conditions f or growing latticematched layers of optoelectronic quality are given. The cut-off wavelength limitations due to the MG are : 2. 4 p. m for GaInAsSb and 2. 6 p. m for lnAsSbP. As an example of application results are presented on LPE grown photodiodes based on these quaternary alloys. 1 -
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric Tournie, J. L. Lazzari, Habib Mani, F. Pitard, Claude L. Alibert, and Andre Francis Joullie "Growth by liquid phase epitaxy and characterization of GaInAsSb and InAsSbP alloys for mid-infrared applications (2-3 um)", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24427
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Cited by 11 scholarly publications.
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KEYWORDS
Liquid phase epitaxy

Gallium indium arsenide antimonide phosphide

Indium arsenide antimonide phosphide

Mid-IR

Magnesium

Gallium antimonide

Indium arsenide

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