Photoreflectance for the in-situ monitoring of semiconductor growth and processing

Fred H. Pollak

doi:10.1117/12.24287

1 March 1991 Photoreflectance for the in-situ monitoring of semiconductor growth and processing

Fred H. Pollak

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24287
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Photoreflectance a contactless form of electromodulation is a very useful technique for the in-situ monitoring of important growth/processing parameters. This paper will discuss some recent applications including (a) determination of substrate temperature (GaAs InP) and alloy composition (GaAlAs InGaAs) during actual growth condition at elevated temperatures (b) evaluation of interfacial quality of a strained layer In0 2Ga0 8As/GaAs single quantum well and (c) studies of Fermi level pinning. The latter includes measurements in an MBE machine before (and after) exposure to air and the effects of metallization (Schottky barrier formation) in a UHV chamber.

Citation Download Citation

Fred H. Pollak "Photoreflectance for the in-situ monitoring of semiconductor growth and processing", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24287

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