Shadow masked growth for the fabrication of photonic integrated circuits

Piet M. A. Demeester; Ingrid Moerman; Youcai Zhu; Peter Van Daele; J. Thomson

doi:10.1117/12.24356

1 March 1991 Shadow masked growth for the fabrication of photonic integrated circuits

Piet M. A. Demeester, Ingrid Moerman, Youcai Zhu, Peter Van Daele, J. Thomson

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24356
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The present study reports new research results of a dislocation structure of single crystalline SiC layers grown by CVD on Sisubstrates without a buffer layer. Connection between variation in dislocation 'structure and the conditions of growing has been studied by method of X-ray differential diffractometry. It is demonstrated, the best quality layers, produced at 1100°C and low flow rate of reagent gases, have a block structure, block sizes being approximately 500A.

Citation Download Citation

Piet M. A. Demeester, Ingrid Moerman, Youcai Zhu, Peter Van Daele, and J. Thomson "Shadow masked growth for the fabrication of photonic integrated circuits", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24356

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