Dry etching for silylated resist development

Philippe Laporte; Luc Van den Hove; Yosias Melaku

doi:10.1117/12.48914

1 March 1991 Dry etching for silylated resist development

Philippe Laporte, Luc Van den Hove, Yosias Melaku

Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48914
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

Dry developable resist systems based on silylation have been presented as an alternative solution for submicron and deep submicron lithography. The DESIRE process (Diffusion Enhanced Silylated Resist) is the most well-known example of such a process. In this paper the dry development step using reactive ion etching has been investigated using a TEGAL MCR (Magnetically Confined Reactor). The TEGAL MCR system is a versatile tool which provide two major improvements over the classical RIE: the magnetical confinement of the plasma and the triode RF coupling system. In this paper the influence of the pressure the bias power and the oxygne flow rate on the etch rate and the shape of the photoresist pattern was inverstigated. The etch rate of resist and associated uniformity depend on the plasma etching parameters. The exposure dose is however the major parameter determining the critical dimension (CD). I .

Citation Download Citation

Philippe Laporte, Luc Van den Hove, and Yosias Melaku "Dry etching for silylated resist development", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48914

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