Photoconductivity of ZnS and ZnSe

B. E. Mason

doi:10.1117/12.2294467

1 November 1990 Photoconductivity of ZnS and ZnSe

B. E. Mason

Proceedings Volume 1438, Laser-Induced Damage in Optical Materials 1989; 14381M (1990) https://doi.org/10.1117/12.2294467
Event: Laser-Induced Damage in Optical Materials 1989, 1989, Boulder, CO, United States

Abstract

ZnS and ZnSe are important materials for laser windows and optical thin- film coatings. Understanding the laser-induced damage mechanism in optical materials provides the ability to make improved damage-resistant materials. Photoconductivity (PC) techniques have demonstrated the capability to provide information on carrier production that can lead to electron avalanche by single or multiple photon absorption processes produced by a high-intensity laser beam. A study of the linear PC using a monochromated Xe lamp and the nonlinear PC using various lasers as excitation sources will be presented for chemically vapor-deposited ZnS and ZnSe.

Citation Download Citation

B. E. Mason "Photoconductivity of ZnS and ZnSe", Proc. SPIE 1438, Laser-Induced Damage in Optical Materials 1989, 14381M (1 November 1990); https://doi.org/10.1117/12.2294467

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