In-situ monitoring of silylation mechanisms by laser interferometry

Christophe Pierrat; Patrick Jean Paniez; P. Martin

doi:10.1117/12.46376

1 June 1991 In-situ monitoring of silylation mechanisms by laser interferometry

Christophe Pierrat, Patrick Jean Paniez, P. Martin

Proceedings Volume 1466, Advances in Resist Technology and Processing VIII; (1991) https://doi.org/10.1117/12.46376
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

Polymer composition and silylation kinetics have been correlated using a prototype module' derived from a Chemical Vapor Deposition (CVD) reactor. Reflectivity over the wafer was monitored in real time during silylation by laser interferometry. Using simulations, reflectivity variations can be related to changes in polymer layer thickness and refractive index, and then to silicon depth on the polymer. This work has been carried out mainly with pure cresol-formaldehyde novolak polymers and poly(p-vinylphenol). For these experiments, polymers with different isomeric structures and glass transition temperatures were studied comparison between the formulations was made in terms of swelling rate and silicon profiles in the resist. The influence of the hydroxyl group was also investigated using the various isomers of novolak polymers having the same glass transition temperature and using the same silylation conditions. We find that the silylation rate is higher when the glass transition temperature is lower. However, the glass transition temperature (Tg) is not the only pertinent parameter as the silylation rate of different polymers having the same Tg can be notably different. Finally, a review of possible silicon profiles was made including potential self diffusion or intermixing of silylated and unsiylated polymer chains.

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Christophe Pierrat, Patrick Jean Paniez, and P. Martin "In-situ monitoring of silylation mechanisms by laser interferometry", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46376

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