Electron ballistic transport in submicron GaAs Shottky barrier diode

A. Yu. Gorbachev

doi:10.1117/12.2297952

1 October 1991 Electron ballistic transport in submicron GaAs Shottky barrier diode

A. Yu. Gorbachev

Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 15766N (1991) https://doi.org/10.1117/12.2297952
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland

Abstract

Electron transport in submioron GaAs Shottky diode has been simulated under the barrier capacitance modulation conditions by high frequency (f>100 GHz) voltage pumping signal.

Citation Download Citation

A. Yu. Gorbachev "Electron ballistic transport in submicron GaAs Shottky barrier diode", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15766N (1 October 1991); https://doi.org/10.1117/12.2297952

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