Paper
1 February 1992 Control of polysilicon emitter interface using RTCVD
Ahmad Kermani, Bahram Jalali
Author Affiliations +
Proceedings Volume 1595, Rapid Thermal and Integrated Processing; (1992) https://doi.org/10.1117/12.56668
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
The device characteristics of n-p-n poly-emitter bipolar transistors under a variety of interface control schemes have been studied. Common emitter current gain, reverse bias emitter/base leakage current and emitter resistance parameters have been measured. Polysilicon emitter contacts were deposited in a RTCVD reactor, with and without an in-situ interface treatment step, using SiH IH2 chemistry at 4 torr total pressure. Further, the effect of a 30:1 HF dip, prior to loading the wafers into the load-lock, was also investigated. It is concluded that the behavior of the NPN transistors has a direct correlation with the polysilicon microstructure and interfacial oxide layer which is primarily influenced by the interface treatment process. The highest current gain and lowest emitter/base leakage current was obtained for the samples with a cleaned/oxidized polysilicon/silicon interface.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ahmad Kermani and Bahram Jalali "Control of polysilicon emitter interface using RTCVD", Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); https://doi.org/10.1117/12.56668
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KEYWORDS
Interfaces

Oxides

Resistance

Transistors

Diffusion

Crystals

Hydrogen

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