2 x 64 GaAs readout for IR FPA application

Lester J. Kozlowski; Robert E. Kezer

doi:10.1117/12.60501

1 July 1992 2 x 64 GaAs readout for IR FPA application

Lester J. Kozlowski, Robert E. Kezer

Proceedings Volume 1684, Infrared Readout Electronics; (1992) https://doi.org/10.1117/12.60501
Event: Aerospace Sensing, 1992, Orlando, FL, United States

Abstract

A high-speed 2 x 64 GaAs readout with direct injection input has been demonstrated. The readout was fabricated in E/D MESFET technology and is intended for hybridization to photovoltaic detector arrays, specifically PV HgCdTe, for use at long wavelength infrared (LWIR) backgrounds (greater than 5 x 10 exp 15 photons/sq cm). System-limited data rate of 50 MHz was achieved at reasonable power dissipation of not greater than 125 mW. Enhancement-mode MESFETs in both implanted and heterostructure E/D MESFET structures were observed to have low 1/f noise and high subthreshold ideality. The noise spectral density of superlattice-buffered heterostructure E-MESFETs operating at drain current of 500 nA (nominal tactical LWIR detector current) was typically about 2 micro-V/Hz exp 1/2 at 1 Hz, which is comparable to silicon NMOS. This is lower than needed for background limited IR photodetector focal plane array sensitivity.

Citation Download Citation

Lester J. Kozlowski and Robert E. Kezer "2 x 64 GaAs readout for IR FPA application", Proc. SPIE 1684, Infrared Readout Electronics, (1 July 1992); https://doi.org/10.1117/12.60501

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