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The planar doped barrier diode being majority carrier semiconductor device has promising application areas in high-frequency and microwave circuits. The paper reviews the main features of diode structures. The different current conducting processes as the thermionic emission, the diffusion, and the tunneling are treated. The design rules for the barrier height also are given, and our own experimental results reported. Microwave diodes and zero bias detectors have been fabricated in RITP on layer structures grown in TUT.
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Bela Szentpali, Vo Van Tuyen, M. Nemeth-Sallay, Arto K. Salokatve, Harry M. Asonen, Markus Pessa, "GaAs planar doped barrier diodes for microwave applications," Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131009