Characterization of a high-density plasma source for dry develop

Ajit P. Paranjpe; Cecil J. Davis

doi:10.1117/12.142915

16 April 1993 Characterization of a high-density plasma source for dry develop

Ajit P. Paranjpe, Cecil J. Davis

Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142915
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

The nature of the dry develop process demands controllable ion energies for good etch selectivity, a large highly directional ion flux for good anisotropy, and a clean etch. As a part of the plasma characterization, the plasma density, the resist etch rate, the ion energy and the ion energy flux have been determined as a function of process conditions, for an inductively coupled plasma (ICP) source. The plasma density and ion flux increase linearly with antenna power. A factor of four variation in ion to neutral flux ratio could be achieved over the rage of flow rates and power levels investigated. Independent control of the etch rate and selectivity is possible with the ICP system. However, eddy current heating of the wafer at high power levels causes loss of anisotropy. Feasibility of using an ICP for the DESIRE process is demonstrated. Good pattern linearity can be achieved for feature sizes ranging from 0.35 - 0.60 micrometers . The process latitude for the exposure time, silylation time, and etch conditions is wide. The etch is clean, exhibits good anisotropy, and no proximity effects. The ICP etch system is an attractive choice for sub half micron patterning using DESIRE.

Citation Download Citation

Ajit P. Paranjpe and Cecil J. Davis "Characterization of a high-density plasma source for dry develop", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); https://doi.org/10.1117/12.142915

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