Electroabsorptive resonator-free self-electro-optic effect devices

Boris S. Ryvkin

doi:10.1117/12.147921

28 June 1993 Electroabsorptive resonator-free self-electro-optic effect devices

Boris S. Ryvkin

Proceedings Volume 1807, Photonic Switching; (1993) https://doi.org/10.1117/12.147921
Event: Topical Meeting on Photonic Switching, 1992, Minsk, Belarus

Abstract

It is shown that very effective ERF SEED can be expected for II-VI semiconductor heterostructures with a homogeneous electroabsorptive narrow-gap layer. Some principles for realization of high contrast ERF SEED are presented.

Citation Download Citation

Boris S. Ryvkin "Electroabsorptive resonator-free self-electro-optic effect devices", Proc. SPIE 1807, Photonic Switching, (28 June 1993); https://doi.org/10.1117/12.147921

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