Edge effects in phase-shifting masks for 0.25-um lithography

Alfred K. K. Wong; Andrew R. Neureuther

doi:10.1117/12.142143

26 March 1993 Edge effects in phase-shifting masks for 0.25-µm lithography

Proceedings Volume 1809, 12th Annual BACUS Symposium on Photomask Technology and Management; (1993) https://doi.org/10.1117/12.142143
Event: Photomask Technology, 1992, Sunnyville, CA, United States

Abstract

The impact on image quality of scattering from phase-shifter edges and of interactions between phase-shifter and chrome edges is assessed using rigorous electromagnetic simulation. Effects of edge taper in phase-shift masks, spacing between phase-shifter and chrome edges, small outrigger features with a trench phase-shifter, and of the repair of phase defects by etching to 360 degree(s) are considered. Near field distributions and diffraction efficiencies are examined and images are compared with more approximate results from the commonly used Hopkins' theory of imaging.

Citation Download Citation

Alfred K. K. Wong and Andrew R. Neureuther "Edge effects in phase-shifting masks for 0.25-µm lithography", Proc. SPIE 1809, 12th Annual BACUS Symposium on Photomask Technology and Management, (26 March 1993); https://doi.org/10.1117/12.142143

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