Evaluation of strain relaxation in GaAsP/GaAs multilayer structure grown on misoriented GaAs substrate

Jerzy Sass

doi:10.1117/12.156924

15 October 1993 Evaluation of strain relaxation in GaAsP/GaAs multilayer structure grown on misoriented GaAs substrate

Jerzy Sass

Proceedings Volume 1845, Liquid and Solid State Crystals: Physics, Technology and Applications; (1993) https://doi.org/10.1117/12.156924
Event: Liquid and Solid State Crystals: Physics, Technology, and Applications, 1992, Zakopane, Poland

Abstract

The relaxed multilayer structure is characterized by means of a tilt angle, C-factor, and the lateral coherency length. All these parameters were evaluated for the GaAs_(0.7)P_(0.3)/GaAs multilayer structure grown on a miscut GaAs(001) substrate. The determination of SL structural parameters was performed using the simulation program developed for two dimensional calculations important for multilayer structure grown on miscut substrates.

Citation Download Citation

Jerzy Sass "Evaluation of strain relaxation in GaAsP/GaAs multilayer structure grown on misoriented GaAs substrate", Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); https://doi.org/10.1117/12.156924

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