Smart optical and image sensors fabricated with industrial CMOS/CCD semiconductor processes

Peter Seitz; Dirk Leipold; Joerg Kramer; Jeffrey M. Raynor

doi:10.1117/12.148605

12 July 1993 Smart optical and image sensors fabricated with industrial CMOS/CCD semiconductor processes

Peter Seitz, Dirk Leipold, Joerg Kramer, Jeffrey M. Raynor

Proceedings Volume 1900, Charge-Coupled Devices and Solid State Optical Sensors III; (1993) https://doi.org/10.1117/12.148605
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1993, San Jose, CA, United States

Abstract

Photosensitive elements with well-chosen geometry, combined with suitable analog and digital circuitry on the same CMOS/CCD chip, lead to 'smart image sensors' with interesting capabilities and properties. All our smart sensors were fabricated with commercially available multi-process wafer services of CMOS process, one of them with a buried-channel CCD option. Measurement of the optoelectronic properties of standard CMOS/CCD processes (wavelength-dependent quantum efficiency, lateral homogeneity of quantum efficiency/photo- conductivity, CCD charge transport efficiency, etc.) show excellent performance. The smartness that lies in the geometry is illustrated with a single-chip motion detector, a 3-D depth video camera, a single-chip planar distance sensor, and a sine/cosine (Fourier) transform sensor for fast optical phase measurements. The concept of problem-adapted geometry is also shown with a dynamic frame-transfer CCD whose pixel size and shape can be changed electrically in real-time through charge-binning. Based on the wavelength-dependent absorption of silicon, all-solid-state color pixels are demonstrated by properly arranging the available pn-junctions in the third (bulk) dimension. Moderate color measurement performance is achieved using an unmodified CMOS/CCD process, with a CIE general color-rendering index of R_a equals 69.5.

Citation Download Citation

Peter Seitz, Dirk Leipold, Joerg Kramer, and Jeffrey M. Raynor "Smart optical and image sensors fabricated with industrial CMOS/CCD semiconductor processes", Proc. SPIE 1900, Charge-Coupled Devices and Solid State Optical Sensors III, (12 July 1993); https://doi.org/10.1117/12.148605

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